MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density
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چکیده
منابع مشابه
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crys...
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We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
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In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...
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This study aims at achieving highly crystalline and smooth Nitrogen-polar (N-polar) GaN layers deposited on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE). The influence of nitridation, temperature and V/III ratio on the polarity, quality and coalescence of GaN is systematically investigated. It was observed that the initial nitridation of sapphire before GaN growth is critical f...
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A sparse nucleation process on sapphire ~0001! substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4310 cm. Based on this process, we performed direct lateral epitaxial overgrowth ~LEO! of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire ~0001! substrates. An aggregate lateral to vertical growth rate ratio of...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2016
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.02.029